发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
摘要 <P>PROBLEM TO BE SOLVED: To ensure a height of a bump electrode or make uniform the height of the bump electrode to be formed. <P>SOLUTION: In a manufacturing method of a semiconductor device which forms the bump electrode in a pad of a semiconductor substrate, it comprises the steps of forming the bump electrode in a substrate for forming the bump electrode different from the semiconductor substrate; opposing the semiconductor substrate to the substrate for forming the bump electrode formed with the bump electrode, forming a connection layer between the semiconductor substrate and the bump electrode, and integrating the semiconductor substrate and the bump electrode by this connection later; and separating the bump electrode from the substrate for forming the bump electrode, and forming the bump electrode composed of the bump electrode and the connection layer in the pad of the semiconductor substrate. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007035842(A) 申请公布日期 2007.02.08
申请号 JP20050215694 申请日期 2005.07.26
申请人 HITACHI ULSI SYSTEMS CO LTD 发明人 OGUMA HIROSHI;HORIUCHI HITOSHI;SUGAI TAKAYASU
分类号 H01L21/60 主分类号 H01L21/60
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