| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device which laminates at least an n-type nitride semiconductor layer, a light emitting layer, and a p-type nitride semiconductor layer on a substrate, and has a rugged structure on an upper face thereof; and in which a luminous efficiency is increased. <P>SOLUTION: A buffer layer 3 is formed on a sapphire substrate 2; and an n-type gallium nitride compound semiconductor layer 4, a light emitting layer 5, and a p-type gallium nitride compound semiconductor layer 6 are formed at a film formation temperature of 1,000°C. Thereafter, the temperature is dropped down to 800°C to continue to grow it, so that a growth to a face direction is suppressed, and a quadrangular pyramid convex part 7 can be formed which has no crystal interface with the p-type gallium nitride compound semiconductor layer 6. Accordingly, the convex part 7 is caused to enhance a fetch efficiency of light generated in the light emitting layer 5, whereas the p-type gallium nitride compound semiconductor layer 6 does not suffer from damaging by etching and has a required minimum thickness to be intended to lower the resistance, and it is possible to materialize a blue or ultraviolet light emitting diode 1 with a high light emitting efficiency. <P>COPYRIGHT: (C)2007,JPO&INPIT |
