| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which is prevented from variations in resistance distribution. SOLUTION: The semiconductor device comprises a semiconductor substrate 12 having a plurality of interconnection formation regions 12c existing on a first plane 12a; first insulation film 14 formed on the first plane; one or two or more buried contacts 16a formed in contact with elements 13; a plurality of dummy buried contacts 18a formed not in contact with the elements; first interconnection layer 20 including a plurality of first interconnection portions 22 electrically connected to the buried contacts, and a plurality of dummy first interconnection portions 24 connected to the dummy buried contacts; second insulation film 30 covering the surface 14a and the first interconnection layer; buried via 32a for embedding a via hole 32 for exposing the first interconnection portion; dummy buried vias 18a for embedding a plurality of dummy via holes 18 for exposing part of the dummy first interconnection portion; and second interconnection layer 40 including a second interconnection portion 42 electrically connected to the buried via, and a dummy second interconnection portion 44 connected to the dummy buried vias. COPYRIGHT: (C)2007,JPO&INPIT |
