| 摘要 |
PROBLEM TO BE SOLVED: To provide a cleaning liquid that shows uniformly favorable cleaning property on a resist of ArF specification which is not sufficiently cleaned with a conventional cleaning liquid, and that shows high drying property after processing without deteriorating characteristics of a resist by cleaning. SOLUTION: The cleaning liquid for lithography comprises (A) a lower alkyl ketone by 5 to 100 mass% and (B)γ-butyrolactone by 95 to 0 mass%. COPYRIGHT: (C)2007,JPO&INPIT |
