| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a cerium oxide abrasive for speedily polishing a surface to be polished, such as an SiO<SB>2</SB>insulating film, without any flaws. <P>SOLUTION: An Si wafer for forming the SiO<SB>2</SB>insulating film manufactured by a TEOS-CVD method is polished by the cerium oxide abrasive for polishing a semiconductor substrate that is slurry containing cerium oxide particles, a polyacrylic acid ammonium salt, and water, where the average particle diameter of the cerium oxide particles in the slurry is 200 nm or higher and 400 nm or smaller. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
