| 摘要 |
This invention relates to a technology to form a polysilicon resistor having a high resistance in a semiconductor device using a silicide process. A manufacturing method of the semiconductor device of this invention includes forming an insulation film on a semiconductor substrate, forming a polysilicon film on the insulation film, injecting a first impurity into an entire surface of the polysilicon film, forming a gate electrode and a resistor layer by patterning the polysilicon film, injecting a second impurity into the semiconductor substrate to form a source-drain region adjacent the gate electrode while the resistor layer is covered with a mask, forming a sidewall insulation film on a sidewall of the gate electrode, forming a high impurity concentration source-drain region adjacent the sidewall insulation film by injecting a third impurity into the semiconductor substrate while the resistor layer is covered with a mask, and forming titanium silicide film on a contact portion in the resistor layer, on the gate electrode and on the source-drain region.
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