FLIP-CHIP LIGHT EMITTING DEVICE

摘要

A flip-chip light emitting device is provided to reduce remarkably the contact resistance between a P type semiconductor layer and a reflective electrode and to improve a light extraction efficiency by using an improved P type electrode structure. An N type semiconductor layer(11), an active layer(12), a P type semiconductor layer(13) and a P type electrode(16) are sequentially formed on a substrate(10). An N type electrode(19) is formed on an exposed portion of the N type semiconductor layer. The P type electrode consists of an ohmic contact layer and a reflective layer. The ohmic contact layer(14) is formed at a portion adjacent to the N type electrode on the P type semiconductor layer. The ohmic contact layer has a predetermined width. The reflective layer(15) is used for covering the ohmic contact layer and the P type semiconductor layer.