| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a radiation-sensitive resin composition useful for chemical amplification-type resists excellent in depth of focus (DOF) in particular, while maintaining enough basic performances as resist, and significantly reduced in development defects, and to provide a polysiloxane useful as a constituent of this resin composition. <P>SOLUTION: The polysiloxane has structural units each represented by the formula: -[Si(R)O<SB>2</SB>]- [wherein, R is a -R<SP>1</SP>NHSO<SB>2</SB>R<SP>2</SP>group, wherein R<SP>1</SP>and R<SP>2</SP>are each a (substituted) straight-chain, branched or cyclic bivalent hydrocarbon group (wherein R<SP>2</SP>is free from fluorine atom)] and, preferably, structural units each represented by the formula: -[Si(R<SP>3</SP>COOR<SP>4</SP>)O<SB>2</SB>]- (wherein, R<SP>3</SP>is a cyclic bivalent hydrocarbon group; and R<SP>4</SP>is a monovalent acid-dissociable group). <P>COPYRIGHT: (C)2007,JPO&INPIT |
