MEMORY DEVICE, DEFECTIVE CELL RELIEF METHOD, AND INTERNAL VOLTAGE TRIMMING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a method and a device for repairing and trimming of a flash memory device.

SOLUTION: The flash memory includes a non-volatile memory cell array, an error correction circuit for correcting an error in first phase data stored in the non-volatile memory array and outputting second phase data, and a phase register for storing the second phase data. The phase data is repeatedly programmed into the cell array, and an error correction operation is executed, thereby making it possible to improve the reliability of the relief of a defective cell and the trimming of an internal voltage.

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