发明名称 |
Semiconductor device and method of fabricating the same |
摘要 |
A method for fabricating a semiconductor device, including forming a gate insulating layer and a gate electrode on a substrate; forming insulating layer sidewalls at sides of the gate electrode; forming source/drain regions in surface portions of the substrate that are located, respectively, at sides of the gate electrode; forming a conductive silicide layer on the entire surface of the substrate; and selectively removing the silicide layer from areas other than the gate electrode and the source/drain regions of the substrate. The conductive silicide layer may be made by forming a silicon layer on an entire surface of the substrate; forming a conductive layer on the silicon layer; and thermal-processing the substrate such that the conductive layer reacts with the silicon layer.
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申请公布号 |
US2007032057(A1) |
申请公布日期 |
2007.02.08 |
申请号 |
US20060495387 |
申请日期 |
2006.07.27 |
申请人 |
DONGBU ELECTRONICS CO., LTD. |
发明人 |
CHOON LEE H. |
分类号 |
H01L21/4763;H01L21/336;H01L21/44 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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