摘要 |
<p>Embodiments of the invention provide methods for depositing a material onto a surface of a substrate by using one or more electroless, electrochemical plating, CVD and/or ALD processes. Embodiments of the invention provide a method for depositing a seed layer on a substrate with an electroless process and to subsequently fill interconnect features on the substrate with an ECP process on a single substrate processing platform. Other aspects provide a method for depositing a seed layer on a substrate, fill interconnect features on a substrate, or sequentially deposit both a seed layer and fill interconnect features on the substrate. One embodiment provides a method for forming a capping layer over substrate interconnects. Embodiments further provide a cluster tool configured to deposit a material onto a substrate surface by using one or more electroless, electrochemical plating, CVD and/or ALD processing chambers. In one aspect, a ruthenium-containing catalytic layer is formed.</p> |
申请人 |
APPLIED MATERIALS, INC.;LUBOMIRSKY, DMITRY;SHANMUGASUNDRAM, ARULKUMAR;D'AMBRA, ALLEN;WEIDMAN, TIMOTHY W.;STEWART, MICHAEL P.;RABINOVICH, EUGENE;SHERMAN, SVETLANA;BIRANG, MANOOCHER;WANG, YAXIN;YANG, MICHAEL X.;HANSEN, BRADLEY |
发明人 |
LUBOMIRSKY, DMITRY;SHANMUGASUNDRAM, ARULKUMAR;D'AMBRA, ALLEN;WEIDMAN, TIMOTHY W.;STEWART, MICHAEL P.;RABINOVICH, EUGENE;SHERMAN, SVETLANA;BIRANG, MANOOCHER;WANG, YAXIN;YANG, MICHAEL X.;HANSEN, BRADLEY |