ONE-TRANSISTOR TYPE DRAM TYPE MEMORY CELL, MANUFACTURING METHOD THEREOF AND INTEGRATE CIRCUIT

摘要

PROBLEM TO BE SOLVED: To improve reading sensitivity in a memory cell having one MOS transistor formed in a floating body area whose lower surface is insulated by bonding.

SOLUTION: An area 41 having the same conductive type as the floating body area 1 and doped at density higher than the floating body area 1 is arranged under a drain area 10 of the MOS transistor. Consequently effective channel width between a source 9 and the drain 10 is increased, and thereby a reading current to a fixed gate voltage is reduced.

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