| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent the oxygen barrier of an oxygen barrier film from deteriorating even if thermal treatment takes place in an environment of high temperature oxygen that crystallizes a dielectric film to be a capacitance insulating film in a semiconductor device. <P>SOLUTION: In a first inter-layer insulating film 107 on a semiconductor substrate 100, a contact plug 106 is formed. An oxygen barrier film 109 is electrically connected to the contact plug 106 and is composed of a conductive oxide, and is formed on the first inter-layer insulating film 107. A capacitance element is composed of a lower electrode 111, a ferroelectric film 112 formed on the lower electrode 111, and an upper electrode 113 formed on the ferroelectric film 112; and is formed on the oxygen barrier film 109. In addition, the above ferroeletric film 112 is formed in a way that it partially touches the oxygen barrier film 109. <P>COPYRIGHT: (C)2007,JPO&INPIT |
