| 摘要 |
PROBLEM TO BE SOLVED: To provide a MOS solid imaging device wherein the difference in level of its OB can be reduced more largely than conventional ones, and also, can be eliminated completely. SOLUTION: In the MOS solid imaging device, a plurality of unit cells are arranged including light receiving elements. The light receiving surface of the light receiving element comprises a first one-conductive region adjacent to a transferring gate; and a second one-conductive region which is separated from the transferring gate, is adjacent to the first region, and further, has a higher impurity concentration than the first region. The unit cell has a light shading cell wherein a light shading layer so shades an incident light as not to make it incident on a light receiving surface and has a light receiving cell, wherein an incident light is so made incident on a light receiving surface without being shaded by a light shading layer as to accumulate a luminance information in response to a light receiving quantity. Hereupon, the light shading cell and the light receiving cell have respectively their different spaces from each other, each of which is interposed between the transferring gate and the second region. COPYRIGHT: (C)2007,JPO&INPIT |
