| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device such as a high voltage withstanding driver IC which does not cause an increase in cost and has sufficient dV/dt resistance, such as an HVIC (High Voltage Integrated Circuit). SOLUTION: An n-type separation diffusion region 42 on a high side and an n-type separation diffusion region 43 on a low side are formed away from each other by a distance x which is shorter than the diffusion length of an electron in a p-type semiconductor substrate 41 on the surface layer on the first main surface side of the p-type semiconductor substrate 41. A p-type region 44 which is higher in concentration than the p-type semiconductor substrate 41 is formed in the region between the n-type separation diffusion region 42 on the high side and the n-type separation diffusion region 43 on the low side. A first electrode 45 that contacts with a p-type region 44, and a second electrode 46 that contacts with the second main surface of the p-type semiconductor substrate 41 are grounded. A charge/discharge current that flows from the n-type separation diffusion region 42 on the high side when switching an IGBT on the low side is made to flow toward a substrate rear side, to be led out from the second electrode 46. COPYRIGHT: (C)2007,JPO&INPIT
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