| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a solid state image sensor capable of deeply forming a photodiode and a solid state image sensor. SOLUTION: A first epitaxial layer 13 is stacked on a semiconductor substrate 11, and a part 15 of a photoelectric conversion layer is formed in the first epitaxial layer 13. Thereafter, a second epitaxial layer 16 is formed by performing epitaxial growth on the first epitaxial layer 13, and a remaining portion 33 of the photoelectric conversion layer is formed in the second epitaxial layer 16 so as to be communicated with a part 15 of the photoelectric conversion layer in the first epitaxial layer 13. COPYRIGHT: (C)2007,JPO&INPIT
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