ELECTRON SPIN UTILIZATION ELEMENT AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide an electron spin utilization element for embodying a configuration to attain facility concerning an around nanometer-size ultra-thin film where the setting of a manufacture condition, etc., is very difficult only with an inorganic material and to prevent the generation of a pinhole. SOLUTION: The electron spin utilization element 10 comprises: an electron spin filter part 1 for selectively allowing an up-spin electron or a down-spin electron to flow; an electron spin acting part 9 for allowing a tunnel current to occur by the spin acting; an electron spin detecting part 5 for selectively detecting the up-spin electron or the down-spin electron; and a substrate 6 with the respective parts mounted thereon. The electron spin acting part 9 includes an interface 3 between an inorganic ultra-thin film 8 and an organic ultra-thin film 7. A spatial charge to be generated via the interface 3 is set to be not more than 108C/m3. COPYRIGHT: (C)2007,JPO&INPIT