| 摘要 |
PROBLEM TO BE SOLVED: To prevent the deterioration of the driving power of a transistor and suppress a short channel effect as to an MOSFET formed on an SOI substrate. SOLUTION: This MOSFET comprises a semiconductor substrate 20, an insulating layer 30 formed on the semiconductor substrate, and an SOI layer 40 formed on the insulating layer. A source region 44 and a drain region 46 are formed in the SOI layer. Further, a non-doped region 42 is formed in a position sandwiched between the source region and the drain region in the SOI layer. A gate electrode 60 is provided on the SOI layer via a gate insulating film 50. The drain region is formed in the position offset from the gate electrode, the source region is formed in a position on which the gate electrode overlaps, and the offset length of the drain region is≥10 nm and≤75 nm. COPYRIGHT: (C)2007,JPO&INPIT
|
