ORGANOMETALLIC PRECURSORS AND METHODS OF FORMING THIN FILMS INCLUDING THE USE OF THE SAME

摘要

The present invention provides organometallic precursors and methods of forming thin films including using the same. The organometallic precursors include a metal and a ligand linked to the metal. The ligand can be represented by the following formula (1): wherein R₁ and R₂ are each independently hydrogen or an alkyl group. The thin films may be applied to semiconductor structures such as a gate insulation layer of a gate structure and a dielectric layer of a capacitor.