发明名称 |
MOS VARACTOR WITH SEGMENTED GATE DOPING |
摘要 |
A MOS varactor is formed having a gate electrode comprising at least two abutting oppositely doped regions shorted together, in which the two regions are implanted simultaneously with source/drain implants for first and second types of transistor; at least one contact to a lower electrode is also formed simultaneously with the source/drain implants for the first type of transistor; the varactor insulator is formed simultaneously with the gate insulator for one type of transistor; and the lower electrode is formed simultaneously with a well for the first type of transistor, so that no additional mask is required.
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申请公布号 |
US2007029587(A1) |
申请公布日期 |
2007.02.08 |
申请号 |
US20050161533 |
申请日期 |
2005.08.08 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
GREER HEIDI L.;KIM SEONG-DONG;RASSEL ROBERT M.;VAED KUNAL |
分类号 |
H01L29/76;H01L21/8234 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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