The invention provides a semiconductor device fuse (100), comprising a metal layer (105) and a first semiconductor layer (110) that electrically couples the metal layer to a fuse layer (115), wherein the fuse layer is spaced apart from the metal layer. The semiconductor device fuse further comprises a second semiconductor layer (120) that forms a blow junction interface (125) with the fuse layer. The blow junction interface is configured to form an open circuit when a predefined power is transmitted through the second semiconductor layer to the fuse layer.
申请公布号
WO2007016685(A2)
申请公布日期
2007.02.08
申请号
WO2006US30300
申请日期
2006.07.31
申请人
TEXAS INSTRUMENTS INCORPORATED;PITTS, ROBERT, L.;SHEFFIELD, BRYAN;GRIESMER, ROGER;MCPHERSON, JOE
发明人
PITTS, ROBERT, L.;SHEFFIELD, BRYAN;GRIESMER, ROGER;MCPHERSON, JOE