METHOD FOR FABRICATING CMOS IMAGE SENSOR

摘要

A method for manufacturing a CMOS image sensor is provided to enhance the reliability of processing by reducing the number of contacts. An active region and a pixel region are formed on a substrate. A gate pattern is formed within the pixel region of the substrate. A hard mask layer is formed along a stepped portion of the gate pattern. A first insulating layer is formed on the hard mask layer. An upper portion of the gate pattern is selectively exposed to the outside by patterning the first insulating layer and the hard mask layer. A predetermined portion for being connected with a contact within the active region is exposed to the outside by removing completely the first insulating layer. A silicide layer is formed on the exposed predetermined portion and the gate pattern by an ion implantation process. A silicon nitride layer is selectively formed on the resultant structure. A second insulating layer is formed on the silicon nitride layer. First and second contact holes for exposing the predetermined portion and the gate pattern to the outside are formed on the resultant structure by removing selectively the second insulating layer.