| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a pattern manufacturing system for suppressing irregularity of line width of a pattern line on a both-face substrate, and to provide an exposure device and an exposure method. <P>SOLUTION: The pattern manufacturing system comprises exposure to directly draw a resist overlying on a copper foil formed on both the faces of the substrate by using the line width of the pattern line and an exposure amount designated by processing pattern data 100, forming a resist pattern by developing the exposed resist, and forming a pattern by etching the copper foil of both the faces of the substrate forming the resist pattern. Then, the pattern manufacturing system comprises acquiring image information 200 by scanning a formation pattern after etching, comparing the line width of the pattern line of the image information 200 and the line width of the pattern line of a target formation pattern being a target after etching, adjusting the line width of the pattern line designated by the processing pattern data 100 on each front face and each rear face of the substrate on the basis of the comparison result, and directly drawing the resist by using the adjusted line width. <P>COPYRIGHT: (C)2007,JPO&INPIT |
