| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a mask blank for extreme ultraviolet ray exposure capable of protecting a buffer film against overetching by specifying materials used for forming a light absorbing film and the buffer film, so as to make both the films selective for a dry etching gas condition; and to provide a mask for extreme ultraviolet ray exposure, its manufacturing method, and a pattern transferring method using the mask. <P>SOLUTION: A multilayered film 2 serving as a high-reflective part for exposure light, a capping film 3 protecting the multilayered film 2, a buffer film 4 protecting the multilayered film 2 and the capping film 3, and an absorbing film 5 serving as a low-reflective part, are successively formed on a substrate 1 for the formation of the mask blank for extreme ultraviolet ray exposure. The buffer film 4 contains either Ta or Nb and oxygen as main component elements. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
