| 摘要 |
PROBLEM TO BE SOLVED: To provide a microwave plasma CVD apparatus capable of satisfactorily controlling the plasma position under the condition in which a diamond thin film or the like of a large area and high quality can be manufactured. SOLUTION: The microwave plasma CVD apparatus comprises a vacuum tank 1 having an aperture 2 for introducing the microwave 20 at an upper center, a base material supporting table 11 for supporting a base material in the vacuum tank, a waveguide for guiding the microwave to the aperture, a dielectric window 22 for introducing the microwave in the vacuum tank, a round bar part 23 located at the center of the waveguide, the aperture and the dielectric window, an electrode part 24 combined with an upper part of the vacuum tank for maintaining vacuum and holding the dielectric window, and further comprises an antenna unit 25 for introducing the microwave into the vacuum tank. An end face of the electrode part 24 is formed wider than the dielectric window so as to block the dielectric window, and a recess 26 is formed in a face of the electrode part 24 on the center side of the vacuum tank. COPYRIGHT: (C)2007,JPO&INPIT
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