| 摘要 |
A semiconductor device and methods for protecting a semiconductor device. In an example, the semiconductor device may include a semiconductor substrate including at least one electrostatic discharge (ESD) protection device, at least one metal interconnection line connected to the at least one ESD protection device through a conductive plug and a passivation layer disposed on less than all of the metal interconnection line. In an example method, a semiconductor device may be protected by diverting at least a portion of an electron build-up from an accumulation point to one or more protective circuits along one or more conductive paths, the electron build-up, without the diverting, sufficient to cause an ESD at the accumulation point. In another example, a semiconductor device may be protected by exposing one or more conductive lines to a fuse opening to avoid an ESD by diverting an electron build-up at the fuse opening to one or more ESD protection devices.
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