发明名称 |
METHOD FOR MANUFACTURING THIN FILM TRANSISTOR |
摘要 |
<p>Disclosed is a method for manufacturing a thin film transistor having high resolution and high pattern accuracy with high production efficiency. Particularly disclosed is a method for manufacturing a thin film transistor wherein there is prevented deterioration of semiconductor properties in a plating step for electrode formation. This method is characterized in that a source electrode or a drain electrode is formed by such a process wherein a protective film is formed on an organic semiconductor layer, then a plating catalyst pattern is formed thereon by supplying a liquid containing a plating catalyst, and then a plating agent is brought into contact with the pattern.</p> |
申请公布号 |
WO2007015364(A1) |
申请公布日期 |
2007.02.08 |
申请号 |
WO2006JP314145 |
申请日期 |
2006.07.18 |
申请人 |
KONICA MINOLTA HOLDINGS, INC.;HIRAI, KATSURA |
发明人 |
HIRAI, KATSURA |
分类号 |
H01L21/336;H01L21/288;H01L29/417;H01L29/786;H01L51/05;H01L51/40 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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