发明名称 METHOD FOR MANUFACTURING THIN FILM TRANSISTOR
摘要 <p>Disclosed is a method for manufacturing a thin film transistor having high resolution and high pattern accuracy with high production efficiency. Particularly disclosed is a method for manufacturing a thin film transistor wherein there is prevented deterioration of semiconductor properties in a plating step for electrode formation. This method is characterized in that a source electrode or a drain electrode is formed by such a process wherein a protective film is formed on an organic semiconductor layer, then a plating catalyst pattern is formed thereon by supplying a liquid containing a plating catalyst, and then a plating agent is brought into contact with the pattern.</p>
申请公布号 WO2007015364(A1) 申请公布日期 2007.02.08
申请号 WO2006JP314145 申请日期 2006.07.18
申请人 KONICA MINOLTA HOLDINGS, INC.;HIRAI, KATSURA 发明人 HIRAI, KATSURA
分类号 H01L21/336;H01L21/288;H01L29/417;H01L29/786;H01L51/05;H01L51/40 主分类号 H01L21/336
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