| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device of more improved polarization characteristics in ferroelectric film than before. <P>SOLUTION: The semiconductor device is provided with a lower electrode 3 of a thin film formed on the surface of a semiconductor substrate (single silicon crystal substrate or SOI substrate) 1 through an oxide film 2, a ferroelectric film 4 of the thin film closely provided on the surface of the electrode 3 opposed to the film 2, and an upper electrode 5 of the thin film closely provided on the surface of the film 4 opposed to the electrode 3. The film 4 is provided in at least almost the same scope as in the electrode 5. This allows residual strain generated in the film 4 to be more reduced than that of a conventional example where the film 4 is provided in a more sufficiently wider scope than that of the electrode 5, thereby enabling the device to improve the polarization characteristics of the film 4. <P>COPYRIGHT: (C)2007,JPO&INPIT |
