| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a flash memory device capable of improving a program speed and its programming method. <P>SOLUTION: The method of programming the flash memory device includes steps for charging selection lines with a first voltage while applying program data to bit lines during a bit line setup interval, then activating a block word line so as to connect the selection lines to corresponding word lines after setting up the bit lines, and applying a second voltage, greater than the first voltage, to one of the selection lines after activating the block word line. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
