| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To inexpensively provide a thin film photoelectric converter with high conversion efficiency after photodegradation in a triple-joining-type thin film photoelectric converter containing an amorphous-silicon-based photoelectric conversion unit. <P>SOLUTION: The thin film photoelectric converter 1 includes a transparent conductive film 3, a first amorphous-silicon-based photoelectric conversion unit 41 containing a photoelectric conversion layer with an average thickness of≤150 nm, a second amorphous-silicon-based photoelectric conversion unit 42, an intermediate transreflective film 5, a crystalline-silicon-based photoelectric conversion unit 43, and a metal electrode film. These elements are sequentially laminated on one of principal planes of a transparent insulation substrate 2. In this case, photoelectric current density 42 of the second amorphous-silicon-based photoelectric conversion unit before photodegradation is the largest among photoelectric current densities of other photoelectric conversion units before the photodegradation, and high conversion efficiency can thus be obtained after the photodegradation. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
