| 摘要 |
PROBLEM TO BE SOLVED: To provide a distributed feedback semiconductor laser capable of reducing lattice defects of a diffraction grating forming layer, as compared with the prior art. SOLUTION: The distributed feedback semiconductor laser comprises a first clad layer, a first light confining layer provided on the first cladding layer, an active layer provided on the first light confining layer, a second light confining layer, consisting of AlGaInAs semiconductor and provided on the active layer, an InP semiconductor layer grown on the second light confining layer, an InGsAsP semiconductor layer grown on the InP semiconductor layer, and a second clad layer, consisting of InP semiconductor and provided on the InGsAsP semiconductor layer. A diffraction grating comprises the InGsAsP semiconductor layer and the second clad layer. COPYRIGHT: (C)2007,JPO&INPIT
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