| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a low-reflectance processing method of a silicon substrate for solar cells and a silicon substrate for solar cells capable of reducing the reflective index by stably forming fine unevenness on the surface of the silicon substrate of a single crystal or polycrystal used for solar cells. <P>SOLUTION: There is provided a method of processing the surface of a silicon substrate A of a single crystal or polycrystal used for solar cells with a low reflective index, having a first step of applying a roughening processing on the surface of the silicon substrate A by performing a chemical or physical processing; a second step of performing a first plasma treatment on the surface of the roughened silicon substrate A by using oxygen gas under vacuum; and a third step of forming fine unevenness on the surface of the roughened silicon substrate A by performing a second plasma treatment by using halogen gas under vacuum on the surface of the silicon substrate A that undergone the first plasma treatment. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
