| 摘要 |
PROBLEM TO BE SOLVED: To inhibits the diffusion of the conductive material of a via plug toward a lower electrode at a contact point between the via plug and the lower electrode, thus inhibits protruberance of the lower electrode and the formation of a cavity between the lower electrode and the via plug. SOLUTION: In a lower electrode structure, the conductive material is applied to or plating a through-hole, or filled into the through-hole as the via plug, or applied to or plating or filled into a bottomed via, and has an exposed face on the surface of a board, on which the lower electrode is formed. This lower electrode structure has a diffusion barrier layer, at least between the exposed face of the conductive material and the lower electrode, where the layer inhibits the diffusion of the constituent elements of the conductive material. COPYRIGHT: (C)2007,JPO&INPIT
|
