| 摘要 |
PROBLEM TO BE SOLVED: To set the bottom surface of an SOI substrate to a grounding potential in a semiconductor device wherein a semiconductor configuration having the SOI substrate is provided on a base plate. SOLUTION: The bottom surface of a silicon substrate 7 of an SOI substrate 6 of a semiconductor configuration 3 is connected via protruding electrodes 5 with a grounding layer 2 provided on the top surface of a base plate 1. The grounding layer 2 is connected with an upper-layer wiring 25 for grounding, via a continuity portion 32 interposed between the upper and lower sides of the semiconductor configuration 3 which is provided in a through-hole 31 provided in an upper-layer insulating film 22, an insulating layer 21, the grounding layer 2, and the base plate 1. Consequently, the bottom surface of the silicon substrate 7 of the SOI substrate 6 of the semiconductor configuration 3 is set to the grounding potential. COPYRIGHT: (C)2007,JPO&INPIT |
