METHOD FOR FORMING INSULATING FILM AND INSULATING FILM

摘要

Disclosed is a method for forming a low dielectric constant insulating film having low dielectric constant and high mechanical strength and suitable for interlayer insulating films of semiconductor devices or the like, wherein a material having high vapor pressure which can be easily supplied in a gaseous form is used as a material gas for forming an insulating film by a plasma CVD method. Also disclosed is such a low dielectric constant insulating film. In this method, an Si compound represented by the general formula: Si<SUB>a</SUB>O<SUB>ß</SUB>C<SUB>?</SUB>H<SUB>d</SUB> (wherein a = 1-3, ß = 0-8, ? = 0-8, d = 4-24), a hydrocarbon compound represented by the general formula: C<SUB>e</SUB>O<SUB>?</SUB>H<SUB>?</SUB> (wherein e = 1-8, ? = 0-10, ? = 2-14) and an additive are respectively gasified and supplied as a material gas for forming an insulating film by a plasma CVD method.