| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device using a nitride based III-V compound semiconductor which has high differential efficiency. SOLUTION: The semiconductor laser has an active region with a double-quantum-well structure having two InGaN well layers each of which has a film thickness of 5 nm. In a region where a light confinement coefficientΓis 3.0% or smaller, the deterioration of a threshold current is rather small and a property that differential efficiency is greatly improved (raised) is obtained. On the other hand, in a region where the light confinement coefficientΓis smaller than 1.5%, the threshold current significantly increases and it is seen that the improvement of the differential efficiency becomes small. Therefore, it is preferable that the lower limit of the light confinement coefficientΓis about 1.5%, a differential efficiency of 1.6 W/A is obtained by making the light confinement coefficientΓ3.0% or smaller, and the differential efficiency of 1.7 W/A is obtained by making the light confinement coefficientΓ2.6% or smaller. COPYRIGHT: (C)2007,JPO&INPIT
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