发明名称 MAGNETIC MEMORY
摘要 PROBLEM TO BE SOLVED: To provide a magnetic memory which is less affected by variation in recording and reading conditions, when differential operations etc. are performed. SOLUTION: This magnetic memory is provided with first wiring which extends in the first direction, first and second magnetoresistance effect elements formed on upper and lower sides of the first wiring, respectively, and second and third wirings which extend in the direction intersecting the first direction, respectively, at upper and lower sides of the first wiring. A current is made to flow to at least either of the second and the third wiring, while making a current flow to the first wiring to apply a current magnetic field to at least one of recording layers of the first and the second magnetoresistance effect elements, so that either of multi-value information is recorded. Then, a difference between output signals obtained from the first and second magnetoresistance effect elements by supplying a sense current thereto via the first wiring is detected to be read out as either of multi-value information. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007036272(A) 申请公布日期 2007.02.08
申请号 JP20060247377 申请日期 2006.09.12
申请人 TOSHIBA CORP 发明人 SAITO YOSHIAKI;YODA HIROAKI;ASAO YOSHIAKI
分类号 H01L21/8246;G11C11/15;H01L27/105;H01L43/08 主分类号 H01L21/8246
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