发明名称 |
Semiconductor memory device including on die termination circuit and on die termination method thereof |
摘要 |
A semiconductor memory device is provided. The device includes an on die termination circuit controlling a termination resistance value by detecting a phase change of a signal inputted through a pad. Additionally, the on die termination circuit changes the termination resistance value when an identical phase signal is inputted during n (n is positive integer) periods of a clock signal.
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申请公布号 |
US2007030025(A1) |
申请公布日期 |
2007.02.08 |
申请号 |
US20060429365 |
申请日期 |
2006.05.05 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LIM JONG-HYOUNG;KANG SANG-SEOK |
分类号 |
H03K19/003 |
主分类号 |
H03K19/003 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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