发明名称 ALUMINUM NITRIDE SINTERED COMPACT
摘要 <P>PROBLEM TO BE SOLVED: To provide an aluminum nitride sintered compact having plasma gas resistance and high thermal conductivity and excellent optical properties. <P>SOLUTION: The aluminum nitride sintered compact is characterized in that, in defect analysis in positron annihilation method, the ratio of positrons annihilated within 180 ps (picosecond) in aluminum nitride crystals is &ge;90%, and preferably has thermal conductivity of &ge;200 W/mK. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007031250(A) 申请公布日期 2007.02.08
申请号 JP20050221011 申请日期 2005.07.29
申请人 TOKUYAMA CORP 发明人 KANECHIKA YUKIHIRO;AZUMA MASANOBU
分类号 C04B35/581 主分类号 C04B35/581
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