| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve the problem that it is difficult to optimally lay out two kinds of conductive FinFET at a high density. <P>SOLUTION: Gate electrodes 11 are disposed in parallel or vertical to a specified crystal orientation of a substrate 11. A first conductive first transistor PMOS has an active region disposed orthogonally to the gate electrode. A second conductive second transistor NMOS has an active region disposed obliquely to the gate electrode 11. <P>COPYRIGHT: (C)2007,JPO&INPIT |
