| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing boron nitride nanohorns, by which the boron nitride nanohorns can be obtained in a high yield. SOLUTION: The boron nitride nanohorns are synthesized by heating a mixture comprising a magnesium oxide (MgO) powder and a boron (B) powder and gaseous ammonia in a stream of an inert gas. The boron nitride nanohorns each having a bottom surface diameter of 100-200 nm, a length of 500-1,000 nm, and a wall thickness of about 20 nm can be manufactured by heating the mixture and gaseous ammonia at 1,600-2,000°C for 1-3 h. The boron nitride nanohorns can be used in a semiconductor material, an emitter material, a heat resistant packing material, a high strength material or the like and utilized as an electric field electron emitting device, a hydrogen storage material and a lithium storage material. COPYRIGHT: (C)2007,JPO&INPIT
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