| 摘要 |
The invention relates to a high-speed diode comprising a semiconductor body ( 1 ), in which a heavily n-doped zone ( 8 ), a weakly n-doped zone ( 7 ) and a weakly p-doped zone ( 6 ) are arranged successively in a vertical direction (v), between which a pn load junction ( 4 ) is formed. A number of heavily p-doped islands ( 51 - 57 ) spaced apart from one another are arranged in the weakly p-doped zone ( 6 ). In this case, it is provided that the cross-sectional area density of the heavily p-doped islands ( 51 - 57 ) is smaller in a first area region ( 100 ) near to the edge than in a second area region ( 200 ) remote from the edge.
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