发明名称 |
Formation of fully silicided (FUSI) gate using a dual silicide process |
摘要 |
A method for forming a semiconductor device structure, comprising the steps of independently forming source/drain surface metal silicide layers and a fully silicided metal gate in a polysilicon gate stack. Specifically, one or more sets of spacer structures are provided along sidewalls of the polysilicon gate stack after formation of the source/drain surface metal silicide layers and before formation of the silicided metal gate, in order to prevent formation of additional metal silicide structures in the source/drain regions during the gate salicidation process. The resulting semiconductor device structure includes a fully silicide metal gate that either comprises a different metal silicide material from that in the source/drain surface metal silicide layers, or has a thickness that is larger than that of the source/drain surface metal silicide layers. The source/drain regions of the semiconductor device structure are devoid of other metal silicide structures besides the surface metal silicide layers.
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申请公布号 |
US2007032010(A1) |
申请公布日期 |
2007.02.08 |
申请号 |
US20050195994 |
申请日期 |
2005.08.02 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BIERY GLENN A.;SHAHIDI GHAVAM;STEEN MICHELLE L. |
分类号 |
H01L21/8238;H01L21/336;H01L21/44;H01L21/4763 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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