发明名称 METHOD AND APPARATUS FOR GROWING SINGLE-CRYSTAL METALS
摘要 A method for growing large single crystals of metals is disclosed. A polycrystalline form of a metal specimen is initially heated in a non-oxidizing environment. A minimum plastic strain is then applied to the heated metal specimen to initiate the growth of a selected grain within the heated metal specimen. Additional plastic strain is subsequently applied to the heated metal specimen to propagate the growth of the selected grain to become a large single crystal.
申请公布号 WO2006124266(A3) 申请公布日期 2007.02.08
申请号 WO2006US16771 申请日期 2006.05.03
申请人 THE BOARD OF REGENTS, THE UNIVERSITY OF TEXAS SYSTEM;CIULIK, JAMES, R.;TALEFF, ERIC, M. 发明人 CIULIK, JAMES, R.;TALEFF, ERIC, M.
分类号 C22C45/00;C21D8/12;C30B13/20;C30B28/02 主分类号 C22C45/00
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