发明名称 |
Method for forming a gate dielectric of a semiconductor device |
摘要 |
Disclosed is a method for forming a gate dielectric in a semiconductor device. The present method includes forming a first dielectric layer on a semiconductor substrate; removing a portion of the first dielectric layer to expose a portion of the substrate; forming a nitride layer on the exposed portion of the substrate and the first dielectric layer; forming a transition metal layer on the nitride layer; and oxidizing the transition metal layer to form a transition metal oxide layer.
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申请公布号 |
US2007032021(A1) |
申请公布日期 |
2007.02.08 |
申请号 |
US20060498431 |
申请日期 |
2006.08.02 |
申请人 |
DONGBU ELECTRONICS CO., LTD. |
发明人 |
PARK JEONG H. |
分类号 |
H01L21/8234 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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