发明名称 |
Semiconductor device with thin-film transistors and method of fabricating the same |
摘要 |
A semiconductor device with a TFT includes a substrate, an island-shaped semiconductor film serving as an active layer of the TFT on or over the substrate, a pair of source/drain regions formed in the semiconductor film, and a channel region formed between the pair of source/drain regions in the semiconductor film. The pair of source/drain regions is thinner than the remainder of the semiconductor film other than the source/drain regions. The thickness difference between the pair of source/drain regions and the remainder of the semiconductor film is in a range from 10 angstrom (Å) to 100 angstrom. The total process steps are reduced and the operation characteristic and reliability of the device are improved.
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申请公布号 |
US2007029614(A1) |
申请公布日期 |
2007.02.08 |
申请号 |
US20060481042 |
申请日期 |
2006.07.06 |
申请人 |
NEC LCD TECHNOLOGIES,LTD. |
发明人 |
SHIOTA KUNIHIRO;OKUMURA HIROSHI |
分类号 |
H01L27/12 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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