发明名称 BIPOLAR JUNCTION TRANSISTOR GEOMETRY
摘要 The invention pertains to an integrated circuit comprising a bipolar junction transistor (100) in which a base contact region (120) forms a fishbone configuration and an emitter region (110) is adjacent to the periphery of the fishbone configuration.
申请公布号 WO2005074549(A3) 申请公布日期 2007.02.08
申请号 WO2005US02752 申请日期 2005.01.31
申请人 TRIQUINT SEMICONDUCTOR, INC. 发明人 APEL, THOMAS, R.;MIDDLETON, JEREMY, R.
分类号 H01L27/082;H01L27/102;H01L29/06;H01L29/70;H01L29/737;H01L31/11 主分类号 H01L27/082
代理机构 代理人
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