| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide high data holding force and durability by using a circuit design method with no complicated process increased. <P>SOLUTION: A plurality of cells of a flash memory are tested to determine if they need to be refreshed. The cells are read and a plurality of different sensing ratios are used to determine if any of the cells need to be refreshed. Any cells that are determined to need refreshing are refreshed. The cells are read using only a single constant gate voltage. <P>COPYRIGHT: (C)2007,JPO&INPIT |
