| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma treatment device high in a limit value of input power. <P>SOLUTION: This plasma treatment device is provided with: n-pieces of application electrodes 1-1, 1-2 and 1-3; (n-1)pieces of grounded electrodes 2-1 and 2-2 (n is an integer≥2); and a grounded metal casing covering the application electrodes and the ground electrodes with the application electrodes and the ground electrodes alternately arranged through insulators and ends of the application electrodes and the ground electrodes faced to a sample. The application electrode adjacent to the metal casing is separated from the metal casing through the insulator, a reaction gas is supplied between the ends of the application electrodes and the ground electrodes and the sample, and plasma is generated only in parts between the application electrodes and the ground electrodes and facing to the sample. <P>COPYRIGHT: (C)2007,JPO&INPIT |
