发明名称 |
MOS semiconductor devices having polysilicon gate electrodes and high dielectric constant gate dielectric layers and methods of manufacturing such devices |
摘要 |
A semiconductor device includes a substrate divided into an NMOS region and a PMOS region, a first gate pattern formed on the PMOS region, and a second gate pattern formed on the NMOS region. The first gate pattern includes a first gate oxide layer pattern, a metal oxide layer pattern, a silicon nitride layer pattern and a first polysilicon layer pattern that are sequentially stacked. The second gate pattern includes a second oxide layer pattern and a second polysilicon layer pattern. Related methods are also provided.
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申请公布号 |
US2007032008(A1) |
申请公布日期 |
2007.02.08 |
申请号 |
US20060494100 |
申请日期 |
2006.07.27 |
申请人 |
KIM HYE-MIN;SHIN YU-GYUN;JEON IN-SANG;KANG SANG-BOM;PARK HONG-BAE;JIN BEOM-JUN |
发明人 |
KIM HYE-MIN;SHIN YU-GYUN;JEON IN-SANG;KANG SANG-BOM;PARK HONG-BAE;JIN BEOM-JUN |
分类号 |
H01L21/8238 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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